CJD340 NPN
CJD350 PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
DPAK TRANSISTOR CASE
Central
Semiconductor Corp.
TM
R1 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD340,
CJD350 types are Complementary Silicon Power
Transistors manufactured in a surface mount
package designed for high voltage general
purpose applications.
MARKING CODE: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
3.0
V
Continuous Collector Current
IC
500
mA
Peak Collector Current
ICM
750
mA
Power Dissipation
PD
15
W
Power Dissipation (TA=25C)
PD
1.56
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JC
8.33
C/W
Thermal Resistance
JA
80.1
C/W
ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCE=300V
100
A
IEBO
VEB=3.0V
100
A
BVCEO
IC=1.0mA
300
V
hFE
VCE=10V, IC=50mA
30
240
Central
Semiconductor Corp.
TM
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
CJD340 NPN
CJD350 PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
R1 (26-September 2002)
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING CODE:
FULL PART NUMBER
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