DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMDD4448
type is a ultra-high speed silicon switching diode
manufactured by the epitaxial planar process,
epoxy molded in a SUPERmini
TM
surface mount
package, designed for high speed switching
applications. Marking code is 44.
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
250
mA
Forward Surge Current, tp=1 sec.
IFSM
4000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
VBR
IR=5.0A
75
V
VBR
IR=100A
100
V
IR
VR=20V
25
nA
VF
IF=5.0mA
0.62
0.72
V
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
4.0
pF
trr
IR=IF=10mA, RL=100
, Rec. to 1.0mA
4.0
ns
CMDD4448
SUPERmini
TM
HIGH SPEED
SWITCHING DIODE
SOD-323 CASE
Central
Semiconductor Corp.
TM
R1 ( 20-July 2001)
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