Central
Semiconductor Corp.
TM
162
SOT-143 CASE
DUAL ISOLATED HIGH VOLTAGE
SWITCHING DIODES
CMFD2004i
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMFD2004
i
type is a Silicon Dual Isolated
High Voltage Switching diode designed for
surface mount switching applications
requiring high voltage capabilities.
Marking Code is CJP.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
240
V
Peak Repetitive Reverse Voltage
VRRM
300
V
Peak Repetitive Reverse Current
IO
200
mA
Continuous Forward Current
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp=1
ms
IFSM
4000
mA
Forward Surge Current, tp=1 s
IFSM
1000
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
Q
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
IR
VR=240V
100
nA
IR
VR=240V, TA=150C
100
m
A
BVR
IR=100
m
A
300
V
VF
IF=100mA
1.00 V
CT
VR=0V, f=1.0MHz
5.0 pF
trr
IF=IR=30mA, Irr=3.0mA, RL=100
W
50 ns
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