DESCRIPTION:
The CENTRAL
SEMICONDUCTOR
CMHD2003 is a Silicon Switching Diode,
manufactured by the epitaxial planar
process, epoxy molded in a SOD-123
surface mount package, designed for
applications requiring high voltage
capability. Marking Code is C03.
CMHD2003
HIGH VOLTAGE
SWITCHING DIODE
SOD-123 CASE
Central
Semiconductor Corp.
TM
R2 ( 2-November 2001)
MAXIMUM RATINGS (TA=25C unless otherwise noted)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
250
V
Continuous Forward Current
IF
250
mA
Average Rectified Current
IO
200
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp<1s, TC=25C
IFSM
1.0
A
Power Dissipation
PD
400
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
312.5
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=200V
100
nA
IR
VR=200V, TC=100C
15
A
VF
IF=100mA
1.0
V
CT
VR=0, f=1 MHz
1.5
pF
trr
IF=IR=30mA, RL=100
,
Rec. to 3.0mA
50
ns
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