MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
1.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=20V
11
50
A
BVR
IR=100A
40
53
V
VF
IF=10mA
0.24
0.325
V
VF
IF=100mA
0.35
0.4
V
VF
IF=200mA
0.42
0.5
V
CT
VR=4.0V, f=1.0 MHz
8.5
10
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
4.0
5.0
ns
CMKSH2-4LR
SURFACE MOUNT
ULTRAmini
TM
TRIPLE ISOLATED
SILICON LOW VF SCHOTTKY DIODES
SOT-363 CASE
Central
Semiconductor Corp.
TM
R0 (13-January 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKSH2-4LR
type contains three (3) Isolated Silicon Low VF
Schottky Diodes, epoxy molded in a SOT-363
surface mount package. This ULTRAmini
TM
device
has been designed for switching applications
requiring a low forward voltage drop.
MARKING CODE: CHTL
Central
Semiconductor Corp.
TM
SOT-363 CASE - MECHANICAL OUTLINE
CMKSH2-4LR
SURFACE MOUNT
ULTRAmini
TM
TRIPLE ISOLATED
SILICON LOW VF SCHOTTKY DIODES
R0 (13-January 2005)
LEAD CODE:
1) CATHODE D1
2) CATHODE D2
3) CATHODE D3
4) ANODE D3
5) ANODE D2
6) ANODE D1
MARKING CODE: CHTL
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