MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
4.5
V
Collector Current
IC
50
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=15V
50
nA
IEBO
VEB=4.5V
100
nA
BVCBO
IC=100A
30
V
BVCEO
IC=1.0mA
25
V
BVEBO
IE=100A
4.5
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.5
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.8
V
hFE
VCE=5.0V, IC=0.1mA
400
1200
hFE
VCE=5.0V, IC=1.0mA
450
hFE
VCE=5.0V, IC=10mA
400
fT
VCE=5.0V, IC=500A, f=20MHz
50
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
10
pF
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
450
1800
NF
VCE=5.0V, IC=100A, RS=10k
f=10Hz to 15.7kHz
2.0
dB
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE1/hFE2*
VCE=5.0V, IC=1.0mA
0.9
1.0
|VBEON1-VBEON2|
VCE=5.0V, IC=100A
5.0
mV
* The lowest hFE reading is taken as hFE1.
CMKT5089M10
SURFACE MOUNT
ULTRAmini
TM
DUAL NPN SILICON
MATCHED hFE TRANSISTORS
SOT-363 CASE
Central
Semiconductor Corp.
TM
R2 (7-August 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMKT5089M10 consists of two (2) individual,
isolated 5089 NPN silicon transistors with
matched hFE. This ULTRAmini
TM
device is
manufactured by the epitaxial planar process and
epoxy molded in an SOT-363 surface mount
package. The CMKT5089M10 has been designed
for applications requiring high gain and low noise.
MARKING CODE: C9M0
Central
Semiconductor Corp.
TM
SOT-363 CASE - MECHANICAL OUTLINE
CMKT5089M10
SURFACE MOUNT
ULTRAmini
TM
DUAL NPN SILICON
MATCHED hFE TRANSISTORS
R2 (7-August 2003)
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: C9M0
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