MAXIMUM RATINGS: (TA=25C )
SYMBOL
UNITS
Power Dissipation
PD
200
mW
Operating and Storage Temperature
TJ, Tstg
-65 to +150
C
Thermal Reistance
JA
625
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C) VF=0.9V MAX @ IF=10mA FOR ALL TYPES.
CMKZ5221B THRU CMKZ5261B
SURFACE MOUNT ULTRAminiTM
TRIPLE ISOLATED
SILICON ZENER DIODE
5% TOLERANCE
SOT-363 CASE
Central
Semiconductor Corp.
TM
R0 (6-October 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKZ5221B
Series contains three (3) isolated Silicon Zener
Diodes packaged in an ULTRAminiTM SOT-363
surface mount case, designed for use in
industrial, commercial, entertainment and
computer applications. Higher voltage devices
are available on special order.
MARKING CODE: SEE MARKING CODES ON
ELECTRICAL CHARACTERISTICS TABLE
TYPE
ZENER VOLTAGE
VZ @ IZT
TEST
CURRENT
MAXIMUM
ZENER IMPEDANCE
MAXIMUM
REVERSE
CURRENT
MAX.
TEMP.
COEFF.
MARK.
CODE
MIN
NOM
MAX
IZT
ZZT @ IZT
ZZT @ IZK
IR @ VR
VZ
VOLTS VOLTS VOLTS
mA
mA
A
VOLTS
% /C
CMKZ5221B
2.280
2.4
2.520
20
30
1200
0.25
100
1.0
-0.085
8A1T
CMKZ5222B
2.375
2.5
2.625
20
30
1250
0.25
100
1.0
-0.085
8B1T
CMKZ5223B
2.565
2.7
2.835
20
30
1300
0.25
75
1.0
-0.080
8C1T
CMKZ5224B
2.660
2.8
2.940
20
30
1400
0.25
75
1.0
-0.080
8D1T
CMKZ5225B
2.850
3.0
3.150
20
29
1600
0.25
50
1.0
-0.075
8E1T
CMKZ5226B
3.135
3.3
3.465
20
28
1600
0.25
25
1.0
-0.070
8ACT
CMKZ5227B
3.420
3.6
3.780
20
24
1700
0.25
15
1.0
-0.065
8BCT
CMKZ5228B
3.705
3.9
4.095
20
23
1900
0.25
10
1.0
-0.060
8CCT
CMKZ5229B
4.085
4.3
4.515
20
22
2000
0.25
5.0
1.0
0.055
8DCT
CMKZ5230B
4.465
4.7
4.935
20
19
1900
0.25
5.0
2.0
0.030
8ECT
CMKZ5231B
4.845
5.1
5.335
20
17
1600
0.25
5.0
2.0
0.030
8FCT
CMKZ5232B
5.320
5.6
5.880
20
11
1600
0.25
5.0
3.0
+0.038
8GCT
CMKZ5233B
5.700
6.0
6.300
20
7.0
1600
0.25
5.0
3.5
+0.038
8HCT
CMKZ5234B
5.890
6.2
6.510
20
7.0
1000
0.25
3.0
4.0
+0.045
8JCT
CMKZ5235B
6.460
6.8
7.140
20
5.0
750
0.25
3.0
5.0
+0.050
8KCT
CMKZ5236B
7.125
7.5
7.875
20
6.0
500
0.25
3.0
6.0
+0.058
8LCT
CMKZ5237B
7.790
8.2
8.610
20
8.0
500
0.25
3.0
6.5
+0.062
8MCT
CMKZ5238B
8.265
8.7
9.135
20
8.0
600
0.25
3.0
6.5
+0.065
8NCT
CMKZ5239B
8.645
9.1
9.555
20
10
600
0.25
3.0
7.0
+0.068
8PCT
Central
Semiconductor Corp.
TM
CMKZ5221B THRU CMKZ5261B
SURFACE MOUNT ULTRAminiTM
TRIPLE ISOLATED
SILICON ZENER DIODE
5% TOLERANCE
R0 (6-October 2004)
SOT-363 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C) VF=0.9V MAX @ IF=10mA FOR ALL TYPES.
TYPE
ZENER VOLTAGE
VZ @ IZT
TEST
CURRENT
MAXIMUM
ZENER IMPEDANCE
MAXIMUM
REVERSE
CURRENT
MAX.
TEMP.
COEFF.
MARK.
CODE
MIN
NOM
MAX
IZT
ZZT @ IZT
ZZT @ IZK
IR @ VR
VZ
VOLTS VOLTS VOLTS
mA
mA
A
VOLTS
% /C
CMKZ5240B
9.500
10
10.50
20
17
600
0.25
3.0
8.0
+0.075
8QCT
CMKZ5241B
10.45
11
11.55
20
22
600
0.25
2.0
8.4
+0.076
8RCT
CMKZ5242B
11.40
12
12.60
20
30
600
0.25
1.0
9.1
+0.077
8SCT
CMKZ5243B
12.35
13
13.65
9.5
13
600
0.25
0.5
9.9
+0.079
8TCT
CMKZ5244B
13.30
14
14.70
9.0
15
600
0.25
0.1
10
+0.082
8UCT
CMKZ5245B
14.25
15
15.75
8.5
16
600
0.25
0.1
11
+0.082
8VCT
CMKZ5246B
15.20
16
16.80
7.8
17
600
0.25
0.1
12
+0.083
8WCT
CMKZ5247B
16.15
17
17.85
7.4
19
600
0.25
0.1
13
+0.084
8XCT
CMKZ5248B
17.10
18
18.90
7.0
21
600
0.25
0.1
14
+0.085
8YCT
CMKZ5249B
18.05
19
19.95
6.6
23
600
0.25
0.1
14
+0.086
8ZCT
CMKZ5250B
19.00
20
21.00
6.2
25
600
0.25
0.1
15
+0.086
1A8T
CMKZ5251B
20.90
22
23.10
5.6
29
600
0.25
0.1
17
+0.087
1B8T
CMkZ5252B
22.80
24
25.20
5.2
33
600
0.25
0.1
18
+0.088
1C8T
CMKZ5253B
23.75
25
26.25
5.0
35
600
0.25
0.1
19
+0.089
1D8T
CMKZ5254B
25.65
27
28.35
4.6
41
600
0.25
0.1
21
+0.090
1E8T
CMKZ5255B
26.60
28
29.40
4.5
44
600
0.25
0.1
21
+0.091
1F8T
CMKZ5256B
28.50
30
31.60
4.2
49
600
0.25
0.1
23
+0.091
1G8T
CMKZ5257B
31.35
33
34.65
3.8
58
700
0.25
0.1
25
+0.092
1H8T
CMKZ5258B
34.20
36
37.80
3.4
70
700
0.25
0.1
27
+0.093
1J8T
CMKZ5259B
37.05
39
40.95
3.2
80
800
0.25
0.1
30
+0.094
1K8T
CMKZ5260B
40.85
43
45.15
3.0
93
900
0.25
0.1
33
+0.095
1L8T
CMKZ5261B
44.65
47
49.35
2.7
105
1000
0.25
0.1
36
+0.095
1M8T
Lead Code
1) Anode D1
2) Anode D2
3) Anode D3
4) Cathode D3
5) Cathode D2
6) Cathode D1
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