DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD4448
type contains two (2) Isolated Silicon Switching
Diodes, manufactured by the epitaxial planar
process, epoxy molded in a PICOmini
TM
surface
mount package. These devices are designed for
high speed switching applications.
MARKING CODE: C48
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
120
V
Continuous Forward Current
IF
250
mA
Peak Repetitive Forward Current
IFRM
500
mA
Forward Surge Current, tp=1ms
IFSM
4.0
A
Forward Surge Current, tp=1s
IFSM
1.0
A
Power Dissipation
PD
300
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
417
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
120
150
V
IR
VR=50V
300
nA
IR
VR=50V, TA=125C
100
A
IR
VR=100V
500
nA
VF
IF=1.0mA
0.55
0.59
0.65
V
VF
IF=10mA
0.67
0.72
0.77
V
VF
IF=100mA
0.85
0.91
1.0
V
CT
VR=0, f=1 MHz
1.5
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
2.0
4.0
ns
CMLD4448
SURFACE MOUNT
PICOmini
TM
DUAL, ISOLATED
HIGH SPEED SILICON
SWITCHING DIODES
Central
Semiconductor Corp.
TM
R1 (2-December 2003)
SOT-563 CASE
PDF 
ZIP