DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6001DO
type contains Two (2) Isolated Opposing Configuration,
Silicon Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a PICOmini
TM
surface
mount package. These devices are designed for
switching applications requiring extremely low leakage.
MARKING CODE: C60
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
75
V
Peak Repetitive Reverse Voltage
VRRM
100
V
Continuous Forward Current
IF
250
mA
Forward Surge Current, tp=1 sec.
IFSM
4000
mA
Forward Surge Current, tp=1 sec.
IFSM
1000
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=75V
500
pA
BVR
IR=100A
100
V
VF
IF=1.0mA
0.85
V
VF
IF=10mA
0.95
V
VF
IF=100mA
1.1
V
CT
VR=0, f=1 MHz
2.0
pF
trr
IR=IF=10mA, RL=100 Rec. to 1.0mA
3.0
s
CMLD6001DO
SURFACE MOUNT
PICOmini
TM
DUAL, ISOLATED, OPPOSING
LOW LEAKAGE SILICON
SWITCHING DIODES
Central
Semiconductor Corp.
TM
R0 (3-November 2003)
SOT-563 CASE
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