MAXIMUM RATINGS (SOT-563 Package): (TA=25C)
SYMBOL
UNITS
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
MAXIMUM RATINGS Q1: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
MAXIMUM RATINGS D1: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=125
O
C
10
A
ICEV
VCE=60V, VEB=3.0V
10
nA
IEBO
VEB=3.0V
10
nA
BVCBO
IC=10A
100
145
V
BVCEO
IC=10mA
45
53
V
BVEBO
IE=10A
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.09
0.15
V
VCE(SAT)
IC=500mA, IB=50mA
0.12
0.50
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=0.1mA
100
210
hFE
VCE=10V, IC=1.0mA
100
205
hFE
VCE=10V, IC=10mA
100
205
hFE
VCE=1.0V, IC=150mA
75
150
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
60
130
CMLM2205
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
SILICON SWITCHING NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (06-October 2004)
DESCRIPTION:
The Central Semiconductor CMLM0205 is a
Multi Discrete Module
TM
consisting of a single NPN
Transistor and Schottky Diode packaged in a space
saving PICOminiTM SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
Combination: Small Signal Switching NPN Transistor
and Low VF Schottky Diode.
Complementary Device: CMLM0705
MARKING CODE: C22
TM
Central
Semiconductor Corp.
TM
CMLM2205
M U LT I D I S C R E T E M O D U L E
TM
SURFACE MOUNT
SILICON SWITCHING NPN TRANSISTOR AND
LOW VF SILICON SCHOTTKY DIODE
R0 (06-October 2004)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
pF
NF
VCE=10V, IC=100mA, RS=1.0k, f=1.0kHz
4.0
dB
td
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5, IC=150mA, IB1=15mA
25
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
ELECTRICAL CHARACTERISTICS D1 (TA=25C)
IR
VR= 10V
20
A
IR
VR= 30V
100
A
BVR
IR= 500A
40
V
VF
IF= 100A
0.13
V
VF
IF= 1.0mA
0.21
V
VF
IF= 10mA
0.27
V
VF
IF= 100mA
0.35
V
VF
IF= 500mA
0.47
V
CT
VR= 1.0V, f=1.0 MHz
50
pF
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
MARKING CODE: C22
ELECTRICAL CHARACTERISTICS Q1
(continued)
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