MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
750
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
40
50
V
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.37
0.42
V
VF
IF=100mA
0.61
0.80
V
VF
IF=200mA
0.65
1.0
V
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100C
25
100
A
CT
VR=1.0V, f=1.0 MHz
7.0
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMLSH-4
SURFACE MOUNT PICOmini
TM
DUAL, ISOLATED
SILICON
SCHOTTKY DIODES
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (05-June 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLSH-4 are
two individual electrically isolated 40 volt Schottky
Diodes, in a space saving SOT-563 surface mount
package. This PICOminiTM device has been
designed for applications requiring fast switching
speeds and a low forward voltage drop.
MARKING CODE: C4E
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
Central
Semiconductor Corp.
TM
SOT-563 CASE - MECHANICAL OUTLINE
CMLSH-4
SURFACE MOUNT PICOmini
TM
DUAL, ISOLATED
SILICON
SCHOTTKY DIODES
R0 (05-June 2003)
LEAD CODE:
1) ANODE D1
2) NC
3) ANODE D2
4) CATHODE D2
5) NC
6) CATHODE D1
MARKING CODE: C4E
PDF 
ZIP