DESCRIPTION:
The Central Semiconductor CMLT2207
consists of one 2N2222A NPN silicon transistor
and one individual isolated complementary
2N2907A PNP silicon transistor, manufactured
by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package.
This PICOminiTM device has been designed for
small signal general purpose amplifier and
switching applications.
MARKING CODE: L70
MAXIMUM RATINGS: (TA=25C)
SYMBOL
NPN (Q1)
PNP (Q2)
UNITS
Collector-Base Voltage
VCBO
75
60
V
Collector-Emitter Voltage
VCEO
40
60
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted)
CMLT2207
SURFACE MOUNT
PICOmini
TM
DUAL,COMPLEMENTARY
SILICON TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
ICBO
VCB=60V
-
10
-
-
nA
ICBO
VCB=50V
-
-
-
10
nA
ICBO
VCB=60V, TA=125C
-
10
-
-
nA
ICBO
VCB=50V, TA=125C
-
-
-
10
nA
IEBO
VEB=3.0V
-
10
-
-
nA
ICEV
VCE=60V, VEB(OFF)=3.0V
-
10
-
-
nA
ICEV
VCE=30V, VEB(OFF)=500mV
-
-
-
50
nA
BVCBO
IC=10
A
75
-
60
-
V
BVCEO
IC=10mA
40
-
60
-
V
BVEBO
IE=10
A
6.0
-
5.0
-
V
VCE(SAT)
IC=150mA, IB=15mA
-
0.3
-
0.4
V
VCE(SAT)
IC=500mA, IB=50mA
-
1.0
-
1.6
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
-
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
-
2.0 -
2.6
V
hFE
VCE=10V, IC=0.1mA
35
-
75
-
hFE
VCE=10V, IC=1.0mA
50
-
100
-
hFE
VCE=10V, IC=10mA
75
-
100
-
hFE
VCE=10V, IC=150mA
100 300
100
300
hFE
VCE=1.0V, IC=150mA
50 -
-
-
hFE
VCE=10V, IC=500mA
40
-
50
-
R1 (13-November 2002)
Central
Semiconductor Corp.
TM
CMLT2207
SURFACE MOUNT
PICOmini
TM
DUAL,COMPLEMENTARY
SILICON TRANSISTORS
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
R1 (13-November 2002)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
fT
VCE=20V, IC=20mA, f=100MHz
300
-
-
-
MHz
fT
VCE=20V, IC=50mA, f=100MHz
-
-
200
-
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
-
8.0
-
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
-
25
-
pF
Cib
VEB=2.0V, IC=0, f=1.0MHz
-
-
-
30
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
-
-
k
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
-
-
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
-
8.0
-
-
x10-4
hre
VCE=10V, IC=10mA, f=1.0kHz
-
4.0
-
-
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
-
-
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
-
-
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
-
-
mhos
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
-
-
mhos
rb'Cc
VCB=10V, IE=20mA, f=31.8MHz
150
-
-
ps
NF
VCE=10V, IC=100A, RS=1.0k
, f=1.0kHz
-
4.0
-
dB
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
-
-
45
ns
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
10
-
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
-
25
-
40
ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
100
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
-
225
-
-
ns
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
80
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
-
60
-
-
ns
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
-
-
-
30
ns
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: L70
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