DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2907A
consists of two individual, isolated 2907A PNP
silicon transistors, manufactured by the epitaxial
planar process and epoxy molded in an SOT-563
surface mount package. This PICOminiTM
devices has been designed for small signal
general purpose and switching applications.
MARKING CODE: L07
CMLT2907A
SURFACE MOUNT
PICOmini
TM
DUAL PNP SILICON TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=50V
10
nA
ICBO
VCB=50V, TA=125C
10
A
ICEV
VCE=30V, VBE=0.5V
50
nA
BVCBO
IC=10A
60
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10A
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.4
V
VCE(SAT)
IC=500mA, IB=50mA
1.6
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
2.6
V
hFE
VCE=10V, IC=0.1mA
75
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
R1 (13-November 2002)
Central
Semiconductor Corp.
TM
SOT-563 CASE - MECHANICAL OUTLINE
CMLT2907A
SURFACE MOUNT
PICOmini
TM
DUAL PNP SILICON TRANSISTORS
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
R1 (13-November 2002)
ELECTRICAL CHARACTERISTICS: Continued
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
fT
VCE=20V, IC=50mA, f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VBE=2.0V, IC=0, f=1.0MHz
30
pF
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
ns
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
40
ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ns
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
ns
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30
ns
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
MARKING CODE: L07
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