MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0 V
Collector Current
IC
200 mA
Power Dissipation
PD
350
mW (Note 1)
Power Dissipation
PD
300
mW (Note 2)
Power Dissipation
PD
150
mW (Note 3)
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
-
-
-
50
nA
BVCBO
IC=10A
60 115
90
-
V
BVCEO
IC=1.0mA
40
60
55
-
V
BVEBO
IE=10A
6.0
7.5
7.9
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.057
0.050
0.100
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.100
0.100
0.200
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65
0.75
0.75
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.85
0.85
0.95
V
hFE
VCE=1.0V, IC=0.1mA
90
240
130
hFE
VCE=1.0V, IC=1.0mA
100 235
150
CMLT3904E NPN
CMLT3906E PNP
CMLT3946E NPN/PNP
ENHANCED SPECIFICATION
COMPLEMENTARY PICOmini
TM
SILICON TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
R2 (13-December 2003)
DESCRIPTION:
The Central Semiconductor CMLT3904E (two single
NPN), CMLT3906E (two single PNP), and
CMLT3946E (one each NPN and PNP
complementary) are combinations of enhanced
specification transistors in a space saving SOT-563
package, designed for small signal general purpose
amplifier and switching applications.
ENHANCED SPECIFICATIONS:
BVCBO from 40V min to 60V min. (PNP)
BVEBO from 5.0V min to 6.0V min. (PNP)
VCE(SAT) from 0.3V max to 0.2V max.(NPN),
from 0.4V max to 0.2V max. (PNP)
hFE from 60 min to 70 min. (NPN/PNP)
Enhanced specification.
MARKING CODES:
CMLT3904E:
L04
CMLT3906E:
L06
CMLT3946E: L46
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm
2
Central
Semiconductor Corp.
TM
CMLT3904E NPN
CMLT3906E PNP
CMLT3946E NPN/PNP
ENHANCED SPECIFICATION
COMPLEMENTARY PICOmini
TM
SILICON TRANSISTORS
R2 (13-December 2003)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
hFE
VCE=1.0V, IC=10mA
100
215
150
300
hFE
VCE=1.0V, IC=50mA
70
110 120
hFE
VCE=1.0V, IC=100mA
30
50 55
fT
VCE=20V, IC=10mA, f=100MHz
300
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
8.0
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
12
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
10
X10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100
400
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
60
mhos
NF
VCE=5.0V,IC=100A, RS =1.0K,
4.0
dB
f=10Hz to 15.7kHz
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
ns
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
200
ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
ns
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
CMLT3904E
CMLT3906E
CMLT3946E
MARKING CODE: L04
MARKING CODE: L06
MARKING CODE: L46
Enhanced specification.
ELECTRICAL CHARACTERISTICS
(continued)
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