DESCRIPTION:
The Central Semiconductor CMLT5554
consists of one 2N5551 NPN silicon transistor
and one individual isolated complementary
2N5401 PNP silicon transistor, manufactured
by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package.
This PICOminiTM device has been designed for
high voltage amplifier applications.
MARKING CODE: 5C4
MAXIMUM RATINGS: (TA=25C)
SYMBOL
NPN (Q1)
PNP (Q2)
UNITS
Collector-Base Voltage
VCBO
180
160
V
Collector-Emitter Voltage
VCEO
160
150
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted)
CMLT5554
SURFACE MOUNT
PICOmini
TM
DUAL,COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
SOT-563 CASE
Central
Semiconductor Corp.
TM
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
ICBO
VCB=120V
-
50
-
-
nA
ICBO
VCB=100V
-
-
-
50
nA
ICBO
VCB=120V, TA=100C
-
50
-
-
A
ICBO
VCB=100V, TA=150C
-
-
-
50
A
BVCBO
IC=100A
180
-
160
-
V
BVCEO
IC=1.0mA
160
-
150
-
V
BVEBO
IE=10A
6.0
-
5.0
-
V
VCE(SAT)
IC=10mA, IB=1.0mA
-
0.15
-
0.2
V
VCE(SAT)
IC=50mA, IB=5.0mA
-
0.2
-
0.5
V
VBE(SAT)
IC=10mA, IB=1.0mA
-
1.0
-
1.0
V
VBE(SAT)
IC=50mA, IB=5.0mA
-
1.0 -
1.0
V
hFE
VCE=5.0V, IC=1.0mA
80
-
50
-
hFE
VCE=5.0V, IC=10mA
80
250
60
240
hFE
VCE=5.0V, IC=50mA
30
-
50
-
fT
VCE=10V, IC=10mA, f=100MHz
100
300
100
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
-
6.0
-
6.0
pF
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
40
200
NF
VCE=5.0V, IC=200A, RS=10,
-
8.0
8.0
dB
f=10Hz to 15.7kHz
R0 (26-October 2004)
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