CMLT6427E
E
EN
NH
HA
AN
NC
CE
ED
D S
SP
PE
EC
CIIF
FIIC
CA
AT
TIIO
ON
N
SURFACE MOUNT, PICOmini
TM
SILICON NPN DARLINGTON
TRANSISTOR
SOT-563 CASE
Central
Semiconductor Corp.
TM
R0 (18-October 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT6427E is an
Enhanced Specification, PICOminiTM, NPN Silicon
Darlington Transistor. High DC Current gains, coupled
with a Low Saturation Voltage, make this an excellent
choice for industrial/consumer applications where
operational efficiency and small size are top priority.
MARKING CODE : C64
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm
2
FEATURES:
HIGH CURRENT (500mA MAX)
HIGH DC CURRENT GAIN (15K MIN)
LOW SATURATION VOLTAGE (VCE(SAT)= 0.8V MAX)
HIGH INPUT IMPEDANCE
PICOminiTM SOT-563 SURFACE MOUNT PACKAGE
APPLICATIONS:
MOTOR DRIVERS
RELAY DRIVERS
PRE-AMPLIFIER INPUT APPLICATIONS
VOLTAGE REGULATOR CONTROLS
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCES
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
12
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
350
mW (Note 1)
Power Dissipation
PD
300
mW (Note 2)
Power Dissipation
PD
150
mW (Note 3)
Operating and Storage Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W (Note 1)
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=30V
100
nA
ICEO
VCE=25V
100
nA
IEBO
VBE=10V
100
nA
BVCBO
IC=100A
60
V
BVCES
IC=100A
60
V
BVCEO
IC=10mA
40
V
Enhanced Specification
CC
C C
E
B
Central
Semiconductor Corp.
TM
SOT-563 CASE - MECHANICAL OUTLINE
CMLT6427E
E
EN
NH
HA
AN
NC
CE
ED
D S
SP
PE
EC
CIIF
FIIC
CA
AT
TIIO
ON
N
SURFACE MOUNT, PICOmini
TM
SILICON NPN DARLINGTON
TRANSISTOR
R0 (18-October 2005)
LEAD CODE:
1) COLLECTOR
2) COLLECTOR
3) BASE
4) EMITTER
5) COLLECTOR
6) COLLECTOR
MARKING CODE: C64
A
B
C
H
G
F
D
E
E
R0
1
2
3
6
5
4
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVEBO
IE=10A
14
V
VCE(SAT)
IC=50mA, IB=0.5mA
0.80
V
VCE(SAT)
IC=100mA, IB=0.1mA
0.85
V
VCE(SAT)
IC=500mA, IB=0.5mA
1.0
V
VBE(SAT)
IC=500mA, IB=0.5mA
2.00
V
VBE(ON)
VCE=5.0V, IC=50mA
1.75
V
hFE
VCE=5.0V, IC=10mA
15K
100K
hFE
VCE=5.0V, IC=100mA
25K
200K
hFE
VCE=5.0V, IC=500mA
15K
140K
fT
VCE=5.0V, IC=10mA, f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
7.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
15
pF
NF
VCE=5.0V, IC=1.0mA, RS=100k,
10
dB
f=1.0kHz TO 15.7kHz
Enhanced Specification
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