MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
1.0
A
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=20V
11
50
A
BVR
IR=100A
40
53
V
VF
IF=10mA
0.24
0.325
V
VF
IF=100mA
0.35
0.4
V
VF
IF=200mA
0.42
0.5
V
CT
VR=4.0V, f=1.0MHz
8.5
10
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
4.0
5.0
ns
CMOSH2-4L
SURFACE MOUNT
HIGH CURRENT, LOW VF
SILICON SCHOTTKY DIODE
SOD-523 CASE
Central
Semiconductor Corp.
TM
R2 (17-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMOSH2-4L
is a high current, low VF silicon Schottky diode in
an SOD-523 surface mount package. This device
offers a VF as low as 0.33 volts and is designed
for small signal general purpose applications
where size and low loss is required.
MARKING CODE: 4L
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