CMPD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (6-August 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPD2005S contains two (2) High Voltage
Silicon Switching Diodes, manufactured by the
epitaxial planar process, epoxy molded in a
SOT-23 surface mount package, designed for
applications requiring high voltage capability.
MARKING CODE: DB5
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
300
V
Peak Repetitive Reverse Voltage
VRRM
350
V
Peak Repetitive Reverse Current
IO
200
mA
Continuous Forward Current
IF
225
mA
Peak Repetitive Forward Current
IFRM
625
mA
Forward Surge Current, tp= 1s
IFSM
4.0
A
Forward Surge Current, tp= 1s
IFSM
1.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=280V
100
nA
IR
VR=280V, TA=150C
100
A
BVR
IR=100A
350
V
VF
IF=20mA
0.87
V
VF
IF=100mA
1.0
V
VF
IF=200mA
1.25
V
CT
VR=0, f=1.0 MHz
5.0
pF
trr
IR=IF=30mA, Rec. to 3.0mA, RL=100
50
ns
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPD2005S
SURFACE MOUNT
DUAL, IN SERIES
HIGH VOLTAGE
SILICON SWITCHING DIODES
R1 (6-August 2003)
MARKING CODE: DB5
LEAD CODE:
1) Anode D2
2) Cathode D1
3) Anode D1, Cathode D2
2
3
1
D1
D2
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