CMPD2836E
CMPD2838E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON
SWITCHING DIODES
SOT-23 CASE
Central
Semiconductor Corp.
TM
R2 (6-August 2003)
DESCRIPTION:
The Central Semiconductor CMPD2836E and
CMPD2838E are Enhanced versions of the
CMPD2836 and CMPD2838 High Speed
Switching Diodes. These devices are
manufactured by the epitaxial planar process, in
an epoxy molded surface mount SOT-23
package, designed for high speed switching
applications.
FEATURED ENHANCED SPECIFICATIONS:
BVR from 75V min to 120V min.
VF from 1.2V max to 1.0V max.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
120
V
Average Forward Current
IO
200
mA
Peak Forward Current (tp=1.0 s)
IFM
300
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
120
150
V
IR
VR=80V
100
nA
VF
IF=10mA
0.72
0.85
V
VF
IF=50mA
0.84
0.95
V
VF
IF=100mA
0.92
1.0
V
CT
VR=0, f=1 MHz
1.5
4.0
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
4.0
ns
The following configurations are available:
CMPD2836E
DUAL, COMMON ANODE
MARKING CODE: CA2E
CMPD2838E
DUAL, COMMON CATHODE
MARKING CODE: CA6E
Enhanced specification.
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPD2836E
CMPD2838E
ENHANCED SPECIFICATION
SURFACE MOUNT
DUAL, SILICON
SWITCHING DIODES
R2 (6-August 2003)
MARKING CODE: CA2E
MARKING CODE: CA6E
CMPD2836E
CMPD2838E
1) Cathode D2
1) Anode D2
2) Cathode D1
2) Anode D1
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2
2
3
1
D1
D2
2
3
1
D1
D2
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