PRELIMINAR
Y
PRELIMINAR
Y
CMPD7005
CMPD7005A
CMPD7005C
CMPD7005S
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (8-February 2005)
DESCRIPTION:
The Central Semiconductor CMPD7005,
CMPD7005A, CMPD7005C and CMPD7005S
are silicon switching diodes with various diode
configurations, manufactured by the epitaxial
planar process and packaged in an epoxy
molded SOT-23 surface mount case. These
devices are designed for applications requiring
high voltage switching diodes.
The following configurations are available:
CMPD7005
SINGLE
MARKING CODE: C7005
CMPD7005A
DUAL, COMMON ANODE
MARKING CODE: C705A
CMPD7005C
DUAL, COMMON CATHODE
MARKING CODE: C705C
CMPD7005S
DUAL, IN SERIES
MARKING CODE: C705S
MAXIMUM RATINGS PER DIODE: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
500
V
Peak Repetitive Reverse Voltage
VRRM
500
V
Continous Forward Current
IF
100
mA
Peak Repetitive Forward Current
IFRM
300
mA
Forward Surge Current, tp=1.0 s
IFSM
4.0
A
Forward Surge Current, tp=1.0 s
IFSM
1.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357 C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR=400V
100
nA
IR
VR=400V, TA=150C
100
A
BVR
IR=1.0A
500
V
VF
IF=10mA
1.0
V
VF
IF=50mA
1.2
V
VF
IF=100mA
1.4
V
CT
VR=0V, f=1.0 MHz
5.0
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
500
ns
PRELIMINAR
Y
Central
Semiconductor Corp.
TM
CMPD7005
CMPD7005A
CMPD7005C
CMPD7005S
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
R1 (8-February 2005)
SOT-23 CASE - MECHANICAL OUTLINE
MARKING CODE:
SEE PREVIOUS PAGE
CMPD7005
CMPD7005A
CMPD7005C
CMPD7005S
1) Anode
1) Cathode D2
1) Anode D2
1) Anode D2
2) No Connection
2) Cathode D1
2) Anode D1
2) Cathode D1
3) Cathode
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2
3) Anode D1, Cathode D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
LEAD CODE:
LEAD CODE:
LEAD CODE:
LEAD CODE:
PDF 
ZIP