PRELIMINAR
Y
PRELIMINAR
Y
CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (8-December 2003)
DESCRIPTION:
The Central Semiconductor CMPD7006,
CMPD7006A, CMPD7006C and CMPD7006S
are silicon switching diodes with various diode
configurations, manufactured by the epitaxial
planar process and packaged in an epoxy
molded SOT-23 surface mount case. These
devices are designed for applications requiring
high voltage switching diodes.
The following configurations are available:
CMPD7006
SINGLE
MARKING CODE: C7006
CMPD7006A
DUAL, COMMON ANODE
MARKING CODE: C706A
CMPD7006C
DUAL, COMMON CATHODE
MARKING CODE: C706C
CMPD7006S
DUAL, IN SERIES
MARKING CODE: C706S
MAXIMUM RATINGS PER DIODE: (TA=25C)
SYMBOL
UNITS
Continuous Reverse Voltage
VR
600
V
Peak Repetitive Reverse Voltage
VRRM
600
V
Continous Forward Current
IF
100
mA
Peak Repetitive Forward Current
IFRM
300
mA
Forward Surge Current, tp=1.0 s
IFSM
4.0
A
Forward Surge Current, tp=1.0 s
IFSM
1.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357 C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=480V
7.0 100
nA
IR
VR=480V, TA=150C
100
A
BVR
IR=1.0A
600
675
V
VF
IF=10mA
0.88
1.0
V
VF
IF=50mA
1.04
1.2
V
VF
IF=100mA
1.16
1.4
V
CT
VR=0V, f=1.0 MHz
5.0
pF
trr
IR=IF=10mA, RL=100, Rec. to 1.0mA
500
ns
PRELIMINAR
Y
Central
Semiconductor Corp.
TM
CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
R0 (8-December 2003)
SOT-23 CASE - MECHANICAL OUTLINE
MARKING CODE:
SEE PREVIOUS PAGE
CMPD7006
CMPD7006A
CMPD7006C
CMPD7006S
1) Anode
1) Cathode D2
1) Anode D2
1) Anode D2
2) No Connection
2) Cathode D1
2) Anode D1
2) Cathode D1
3) Cathode
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2
3) Anode D1, Cathode D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
LEAD CODE:
LEAD CODE:
LEAD CODE:
LEAD CODE:
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