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Электронный компонент: CMPF4393

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Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
146
SOT-23 CASE
CMPF4391
CMPF4392
CMPF4393
N-CHANNEL JFET
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Drain-Gate Voltage
VGD
40
V
Gate-Source Voltage
VGS
40
V
Drain-Source Voltage
VDS
40
V
Gate Current
IG
50
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
CMPF4391
CMPF4392
CMPF4393
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
MIN MAX UNITS
IGSS VGS=20V
0.1
0.1
0.1
nA
IGSS VGS=20V, TA=100
o
C
0.2
0.2
0.2
A
IDSS VDS=20V
50
150
25
75
5.0
30
mA
ID(OFF) VDS=20V, VGS=12V
0.1
-
-
nA
ID(OFF) VDS=20V, VGS=7.0V
-
0.1
-
nA
ID(OFF) VDS=20V, VGS=5.0V
-
-
0.1
nA
ID(OFF) VDS=20V, VGS=12V,TA=100
o
C
0.2
-
-
A
ID(OFF) VDS=20V, VGS=7.0V, TA=100
o
C
-
0.2
-
A
ID(OFF) VDS=20V, VGS=5.0V, TA=100
o
C
-
-
0.2
A
BVGSS IG=1.0
A
40
40
40
V
VGS(OFF) VDS=20V, ID=1.0nA
4.0
10
2.0
5.0
0.5
3.0
V
VGS(f) IG=1.0mA
1.0
1.0
1.0
V
VDS(ON) ID=12mA
0.4
-
-
V
VDS(ON) ID=6.0mA
-
0.4
-
V
VDS(ON) ID=3.0mA
-
-
0.4
V
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPF4391 series types are N-Channel Silicon
Field Effect Transistors manufactured by the
epitaxial planar process, epoxy molded in a
surface mount package, designed for switching
applications.
Marking Codes are 6J, 6K, and 6G
Respectively.
R2
147
CMPF4391
CMPF4392
CMPF4393
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
MIN MAX UNITS
rDS(ON)
ID=1.0mA, VGS=0
30
60
100
rds(ON)
VGS=0, ID=0, f=1.0kHz
30
60
100
Ciss
VDS=20V, VGS=0, f=1.0MHz
14
14
14
pF
Crss
VGS=12V, VDS=0, f=1.0MHz
3.5
-
-
pF
Crss
VGS=7.0V, VDS=0, f=1.0MHz
-
3.5
-
pF
Crss
VGS=5.0V, VDS=0, f=1.0MHz
-
-
3.5
pF
tON
ID(ON)=12mA
15
-
-
ns
tON
ID(ON)=6.0mA
-
15
-
ns
tON
ID(ON)=3.0mA
-
-
15
ns
tOFF
VGS(OFF)=12V
20
-
-
ns
tOFF
VGS(OFF)=7.0V
-
35
-
ns
tOFF
VGS(OFF)=5.0V
-
-
50
ns
All dimensions in inches (mm).
LEAD CODE:
1) DRAIN
2) SOURCE
3) GATE