MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
500
mA
Peak Repetitive Forward Current, tp
1ms
IFRM
3.5
A
Forward Surge Current, tp=8ms
IFSM
10
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IR
VR= 10V
20
A
IR
VR= 30V
100
A
BVR
IR= 500A
40
V
VF
IF= 100A
0.13
V
VF
IF= 1.0mA
0.21
V
VF
IF= 10mA
0.27
V
VF
IF= 100mA
0.35
V
VF
IF= 500mA
0.47
V
CT
VR= 1.0V, f=1.0 MHz
50
pF
CMPSH05-4C
SURFACE MOUNT
DUAL, COMMON CATHODE
HIGH CURRENT, LOW VF
SILICON SCHOTTKY DIODE
SOT-23F CASE
Central
Semiconductor Corp.
TM
R0 (14-September 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPSH05-4C is a Dual, Common Cathode
HIGH CURRENT, LOW VF 40 volt Schottky Diode
pair packaged in a space saving SOT-23F surface
mount case. This device has been designed for
small signal general purpose applications when
small size and operational efficiency are prime
requirements.
SPECIFICATIONS:
Low VF = 0.35V max @ 100mA
VRRM = 40V
IF = 500mA
MARKING CODE: C405
Central
Semiconductor Corp.
TM
SOT-23F CASE - MECHANICAL OUTLINE
CMPSH05-4C
SURFACE MOUNT
DUAL, COMMON CATHODE
HIGH CURRENT, LOW VF
SILICON SCHOTTKY DIODE
R0 (14-September 2004)
LEAD CODE:
1) ANODE D2
2) ANODE D1
3) CATHODE D1, D2
MARKING CODE: C405
2
3
1
D1
D2
PDF 
ZIP