MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Voltage
IFRM
350
mA
Forward Surge Current, tp=10ms
IFSM
750
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVR
IR=100A
40
50
V
VF
IF=2.0mA
0.29
0.33
V
VF
IF=15mA
0.37
0.42
V
VF
IF=100mA
0.61
0.80
V
VF
IF=200mA
0.65
1.0
V
IR
VR=25V
90
500
nA
IR
VR=25V, TA=100C
25
100
A
CT
VR=1.0V, f=1 MHz
7.0
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-23 CASE
Central
Semiconductor Corp.
TM
R2 (6-August 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPSH-3E
Series types are Enhanced Versions of the
CMPSH-3 Series of Silicon Schottky Diodes in an
SOT-23 Surface Mount Package.
Enhanced specification.
Additional Enhanced specification.
CMPSH-3E:
SINGLE
MARKING CODE: D95E
CMPSH-3AE:
DUAL, COMMON ANODE
MARKING CODE: DB1E
CMPSH-3CE:
DUAL, COMMON CATHODE
MARKING CODE: DB2E
CMPSH-3SE:
DUAL, IN SERIES
MARKING CODE: DA5E
FEATURED ENHANCED SPECIFICATIONS:
I
F
from 100mA max to 200mA max.
BV
R
from 30V min to 40V min.
V
F
from 1.0V max to 0.8V max.
Central
Semiconductor Corp.
TM
CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
ENHANCED SPECIFICATION
SURFACE MOUNT
SILICON SCHOTTKY DIODES
R2 (6-August 2003)
SOT-23 CASE - MECHANICAL OUTLINE
MARKING
CODE: DB2E
MARKING
CODE: DA5E
MARKING
CODE: D95E
MARKING
CODE: DB1E
CMPSH-3E
CMPSH-3AE
CMPSH-3CE
CMPSH-3SE
1) Anode
1) Cathode D2
1) Anode D2
1) Anode D2
2) No Connection
2) Cathode D1
2) Anode D1
2) Cathode D1
3) Cathode
3) Anode D1, Anode D2
3) Cathode D1, Cathode D2
3) Anode D1, Cathode D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
D1
D2
2
3
1
LEAD CODE:
LEAD CODE:
LEAD CODE:
LEAD CODE:
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