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Электронный компонент: CMPT2222AE

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MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=125C
10
A
ICEV
VCE=60V, VEB=3.0V
10
nA
IEBO
VEB=3.0V
10
nA
BVCBO
IC=10A
100 145
V
BVCEO
IC=10mA
45 53
V
BVEBO
IE=10A
6.0
V
VCE(SAT) IC=150mA, IB=15mA
0.92 0.15
V
VCE(SAT) IC=500mA, IB=50mA
0.12 0.50
V
VBE(SAT)
IC=150mA, IB=15mA
0.6 1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=0.1mA
100 210
hFE
VCE=10V, IC=1.0mA
100 205
hFE
VCE=10V, IC=10mA
100 205
hFE
VCE=1.0V, IC=150mA
75 150
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
60
130
fT
VCE=20V, IC=20mA, f=100MHz
300
MHz
CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (20-February 2003)
DESCRIPTION:
The Central Semiconductor CMPT2222AE is an
Enhanced version of the CMPT2222A NPN
Switching transistor in a SOT-23 surface mount
package, designed for switching applications,
interface circuit and driver circuit applications.
MARKING CODE: C1PE
FEATURED ENHANCED SPECIFICATIONS:
BV
CBO
from 75V min to 100V min. (145V TYP)
V
CE
from 1.0V max to 0.5V max. (0.12V TYP)
h
FE
from 40 to 60 min. (130 TYP)

Enhanced specification.
Central
Semiconductor Corp.
TM
CMPT2222AE
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
R1 (20-February 2003)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: C1PE
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
25
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
k
hie
VCE=10V, IC=10mA, f=1.0kHz
0.25
1.25
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
X10-4
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
X10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
mhos
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
mhos
rb'Cc
VCB=10V, IE=20mA, f=31.8MHz
150
ps
NF VCE=10V,IC=100A, RS =1.0K
, f=1.0kHz
4.0
dB
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
SOT-23 CASE - MECHANICAL OUTLINE