MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
90
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=50V
10
nA
ICBO
VCB=50V, TA=125C
10
A
ICEV
VCE=30V, VEB=0.5V
50
nA
BVCBO
IC=10A
90
115
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10A
5.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.103
0.2
V
VCE(SAT)
IC=500mA, IB=50mA
0.280
0.7
V
VBE(SAT)
IC=150mA, IB=15mA
1.3
V
VBE(SAT)
IC=500mA, IB=50mA
2.6
V
hFE
VCE=10V, IC=0.1mA
100
205
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
75
110
fT
VCE=20V, IC=50mA, f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VBE=2.0V, IC=0, f=1.0MHz
30
pF
CMPT2907AE
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (20-February 2003)
DESCRIPTION:
The Central Semiconductor CMPT2907AE is an
Enhanced version of the CMPT2907A PNP
Switching transistor in a SOT-23 surface mount
package, designed for switching applications,
interface circuit and driver circuit applications.
MARKING CODE: C2FE
FEATURED ENHANCED SPECIFICATIONS:
BVCBO from 60V min to 90V min. (115V TYP)
VCE(SAT) from 1.6V max to 0.7V max.(0.280V TYP)
hFE from 50 min to 75 min. (110 TYP)
Enhanced specification.
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPT2907AE
ENHANCED SPECIFICATION
SURFACE MOUNT
PNP SILICON TRANSISTOR
R1 (20-February 2003)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: C2FE
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ton
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
45
ns
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10
ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
40 ns
toff
VCC=6.0V, IC=150mA, IB1=IB2=15mA
100
ns
ts
VCC=6.0V, IC=150mA, IB1=IB2=15mA
80
ns
tf
VCC=6.0V, IC=150mA, IB1=IB2=15mA
30 ns
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