MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
250
V
Collector-Emitter Voltage
VCEO
220
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=120V
50
nA
ICBO
VCB=120V, TA=100C
50
A
IEBO
VEB=4.0V
50
nA
BVCBO
IC=100A
250
V
BVCEO
IC=1.0mA
220
V
BVEBO
IE=10A
6.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
75
mV
VCE(SAT)
IC=50mA, IB=5.0mA
100
mV
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
V
CMPT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (10-May 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5551E
is an NPN Silicon Transistor, packaged in an
SOT-23 case, designed for general purpose
amplifier applications requiring high breakdown
voltage and small space saving packaging.
FEATURES:
High Collector Breakdown Voltage 250V
Low Leakage Current 50nA Max
Low Saturation Voltage 100mV Max @ 50mA
Complementary Device CMPT5401E
SOT-23 Surface Mount Package
APPLICATIONS:
General purpose switching and amplification
Telephone applications
MARKING CODE: C555
Enhanced Specification
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
R0 (10-May 2006)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: C555
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE
VCE=5.0V, IC=1.0mA
120
hFE
VCE=5.0V, IC=10mA
120
300
hFE
VCE=5.0V, IC=50mA
75
hFE
VCE=10V, IC=150mA
25
fT
VCE=10V, IC=10mA, f=100MHz
100
300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
20
pF
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200A, RS=10
f=10Hz to 15.7kHz
8.0
dB
Enhanced Specification
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