MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Continuous Collector Current
IC
1.0
A
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=120V
50
nA
ICBO
VCB=120V, TA=100C
50
A
IEBO
VEB=4.0V
50
nA
BVCBO
IC=100A
180
V
BVCEO
IC=1.0mA
160
V
BVEBO
IE=10A
6.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.15
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.20
V
VBE(SAT)
IC=10mA, IB=1.0mA
1.00
V
VBE(SAT)
IC=50mA, IB=5.0mA
1.00
V
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
hFE
VCE=10V, IC=1.0A
10
fT
VCE=10V, IC=10mA, f=100MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
15
pF
CMPT5551HC
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (28-January 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT5551HC
type is a high current NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage and high current amplifier
applications.
MARKING CODE: 1FHC
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