Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
188
SOT-23 CASE
CMPT6427
NPN SILICON
DARLINGTON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT6427 type is a NPN Silicon Darlington
Transistors manufactured by the epitaxial
planar process, epoxy molded in a surface
mount package, designed for applications
requiring extremely high gain.
Marking Code is C1V.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
12
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
ICBO
VCB=30V
50
nA
ICEO
VCE=25V
1.0
A
IEBO
VBE=10V
50
nA
BVCBO
IC=100
A
40
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10
A
12
V
VCE(SAT)
IC=50mA, IB=0.5mA
1.20
V
VCE(SAT)
IC=500mA, IB=0.5mA
1.50
V
VBE(SAT)
IC=500mA, IB=0.5mA
2.00
V
VBE(ON)
VCE=5.0V, IC=50mA
1.75
V
hFE
VCE=5.0V, IC=10mA
10K
100K
hFE
VCE=5.0V, IC=100mA
20K
200K
hFE
VCE=5.0V, IC=500mA
14K
140K
fT
VCE=5.0V, IC=10mA, f=100MHz
130
MHz
189
R2
SYMBOL
TEST CONDITIONS
MIN
MAX UNITS
Cob
VCB=10V, IE=0, f=1.0MHz
7.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
15
pF
NF
VCE=5.0V, IC=1.0mA, RS=100k
,
f=1.0kHz TO 15.7kHz
10
dB
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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