MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
350
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
500
mA
Base Current
IB
250
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=250V
50
nA
IEBO
VEB=5.0V (CMPT6517)
50
nA
IEBO
VEB=4.0V (CMPT6520)
50
nA
BVCBO
IC=100A
350
V
BVCEO
IC=1.0mA
350
V
BVEBO
IE=10A (CMPT6517)
6.0
V
BVEBO
IE=10A (CMPT6520)
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.30
V
VCE(SAT)
IC=20mA, IB=2.0mA
0.35
V
VCE(SAT)
IC=30mA, IB=3.0mA
0.50
V
VCE(SAT)
IC=50mA, IB=5.0mA
1.0
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.75
V
VBE(SAT)
IC=20mA, IB=2.0mA
0.85
V
VBE(SAT)
IC=30mA, IB=3.0mA
0.90
V
VBE(ON)
IC=10V, IC=100mA
2.0
V
hFE
VCE=10V, IC=1.0mA
20
hFE
VCE=10V, IC=10mA
30
CMPT6517 NPN
CMPT6520 PNP
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6517,
CMPT6520 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for high voltage driver and
amplifier applications.
MARKING CODE:
CMPT6517: C1Z
CMPT6520: C2Z
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPT6517 NPN
CMPT6520 PNP
COMPLEMENTARY SILICON
HIGH VOLTAGE TRANSISTORS
R4 (26-September 2002)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE:
CMPT6517: C1Z
CMPT6520: C2Z
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE
VCE=10V, IC=30mA
30
200
hFE
VCE=10V, IC=50mA
20
200
hFE
VCE=10V, IC=100mA
15
fT
VCE=20V, IC=10mA, f=20MHz
40
200
MHz
Ccb
VCB=20V, IC=0, f=1.0MHz
6.0
pF
Ceb
VEB=0.5V, IE=0, f=1.0MHz (CMPT6517)
80
pF
Ceb
VEB=0.5V, IE=0, f=1.0MHz (CMPT6520)
100
pF
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