Central
Semiconductor Corp.
TM
194
CMPT8099 NPN
CMPT8599 PNP
COMPLEMENTARY
SILICON TRANSISTOR
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPT8099, CMPT8599 types are
Complementary Silicon Transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for general purpose audio amplifier
applications.
Marking Codes are CKB and C2W
Respectively.
MAXIMUM RATINGS (TA=25
o
C)
SYMBOL
CMPT8099
CMPT8599
UNITS
Collector-Base Voltage
VCBO
80
80
V
Collector-Emitter Voltage
VCEO
80
80
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
Q
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
CMPT8099
CMPT8599
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX UNITS
ICBO
VCB=80V
0.1
0.1
m
A
IEBO
VBE=6.0V
0.1
-
m
A
IEBO
VBE=4.0V
-
0.1
m
A
BVCBO
IC=100
m
A
80
80
V
BVCEO
IC=10mA
80
80
V
BVEBO
IE=10
m
A
6.0
5.0
V
VCE(SAT)
IC=100mA, IB=5.0mA
0.4
0.4
V
VCE(SAT)
IC=100mA, IB=10mA
0.3
0.3
V
VBE(ON)
VCE=5.0V, IC=10mA
0.6 0.8 0.6 0.8
V
hFE
VCE=5.0V, IC=1.0mA
100 300
100 300
hFE
VCE=5.0V, IC=10mA
100
100
195
R2
CMPT8099
CMPT8599
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX UNITS
hFE
VCE=5.0V, IC=100mA
75
75
fT
VCE=5.0V, IC=10mA, f=100MHz 150
150
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
4.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
25
30
pF
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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