MAXIMUM RATINGS: (TA=25C)
SYMBOL
CMPT8099
CMPT8599
UNITS
Collector-Base Voltage
VCBO
80
80
V
Collector-Emitter Voltage
VCEO
80
80
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
CMPT8099
CMPT8599
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=80V
0.1
0.1
A
IEBO
VBE=6.0V
0.1
-
A
IEBO
VBE=4.0V
-
0.1
A
BVCBO
IC=100A
80
80
V
BVCEO
IC=10mA
80
80
V
BVEBO
IE=10A
6.0
5.0
V
VCE(SAT)
IC=100mA, IB=5.0mA
0.4
0.4
V
VCE(SAT)
IC=100mA, IB=10mA
0.3
0.3
V
VBE(ON)
VCE=5.0V, IC=10mA
0.6 0.8
0.6
0.8
V
hFE
VCE=5.0V, IC=1.0mA
100
300
100
300
hFE
VCE=5.0V, IC=10mA
100
100
hFE
VCE=5.0V, IC=100mA
75
75
fT
VCE=5.0V, IC=10mA, f=100MHz
150
150
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
4.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
25
30
pF
CMPT8099 NPN
CMPT8599 PNP
COMPLEMENTARY
SILICON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT8099,
CMPT8599 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for general purpose audio
amplifier applications.
MARKING CODES:
CMPT8099: CKB
CMPT8599: C2W
Central
Semiconductor Corp.
TM
CMPT8099 NPN
CMPT8599 PNP
COMPLEMENTARY
SILICON TRANSISTOR
R4 (26-September 2002)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMPT8099: CKB
CMPT8599: C2W
SOT-23 CASE - MECHANICAL OUTLINE
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