Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
156
CMPT930
NPN SILICON TRANSISTOR
SOT-23 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPT930 type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for small signal general purpose
amplifier applications.
Marking Code is C1X.
MAXIMUM RATINGS (TA=25
oC)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
45
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
5.0
V
Collector Current
IC
30
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=45V
10
nA
ICEO
VCE=5.0V
10
nA
ICES
VCE=45V
10
nA
IEBO
VEB=5.0V
10
nA
BVCBO
IC=10
A
45
V
BVCEO
IC=10mA
45
V
BVEBO
IE=10
A
5.0
V
VCE(SAT)
IC=10mA, IB=0.5mA
1.0
V
VBE(SAT)
IC=10mA, IB=0.5mA
0.6
1.0
V
hFE
VCE=5.0V, IC=10
A
100
300
hFE
VCE=5.0V, IC=500
A
150
hFE
VCE=5.0V, IC=10mA
600
fT
VCE=5.0V, IC=500mA, f=30MHz
30
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
8.0
pF
NF
VCE=5.0V, IC=10mA, RS=10k
,
f=10Hz to 15.7kHz
3.0
dB
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