MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
110
V
Collector-Emitter Voltage
VCEO
110
V
Emitter-Base Voltage
VEBO
5.0
V
Continuous Collector Current
IC
50
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
IEBO
VEB=5.0V
30
nA
BVCBO
IC=100A
110
V
BVCEO
IC=1.0mA
110
V
BVEBO
IE=10A
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.30
V
VBE(ON)
VCE=6.0V, IC=1.0mA
0.55
0.65
V
fT
VCE=6.0V, IC=1.0mA
50
MHz
Cob
VCB=30V, IE=0, f=1.0MHz
3.0
pF
NF
VCE=5.0V, IC=100A, RS=10k
f=10Hz to 15.7KHz
3.0
dB
CMPT992
CMPT992P
CMPT992F
CMPT992E
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
hFE
VCE=6.0V, IC=100A
150
-
150
-
150
-
150
-
hFE
VCE=6.0V, IC=1.0mA
200
800
200
400
300
600
400
800
CMPT992
CMPT992P
CMPT992F
CMPT992E
PNP SILICON
LOW NOISE TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R1 (13-April 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT992
types are PNP silicon low noise transistors
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low noise amplifier applications
where a high BVCEO is required.
MARKING CODE: PLEASE SEE MARKING
CODE TABLE ON FOLLOWING PAGE.
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPT992
CMPT992P
CMPT992F
CMPT992E
PNP SILICON
LOW NOISE TRANSISTOR
R1 (13-April 2004)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
DEVICE
MARKING CODE
CMPT992
C992
CMPT992P
C992P
CMPT992F
C992F
CMPT992E
C992E
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