CMPTA14E
ENHANCED SPECIFICATION
SURFACE MOUNT NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (20-February 2003)
DESCRIPTION:
The Central Semiconductor CMPTA14E is an
Enhanced version of the CMPTA14 NPN
Darlington Transistor. This device is
manufactured by the epitaxial planar process,
epoxy molded in a surface mount SOT-23
package, designed for applications requiring
extremely high gain.
MARKING CODE: C1NE
FEATURED ENHANCED SPECIFICATIONS:
BVCBO from 30V min to 40V min.
VCE(SAT) from 1.5V max to 1.0V max.
hFE from 10K min to 30K min.
Enhanced specification.
Additional Enhanced specification.
MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCES
40
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=10V
100
nA
BVCES
IC=100A
40
60
V
VCE(SAT)
IC=100mA, IB=0.1mA
0.75
1.0
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
30,000
70,000
hFE
VCE=5.0V, IC=100mA
40,000
75,000
hFE
VCE=5.0V, IC=500mA
10,000
35,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPTA14E
ENHANCED SPECIFICATION
SURFACE MOUNT NPN
SILICON DARLINGTON TRANSISTOR
R4 (20-February 2003)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: C1NE
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