MAXIMUM RATINGS (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCES
60
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICES
VCE=50V
500
nA
ICBO
VCB=50V
100
nA
IEBO
VBE=10V
100
nA
BVCES
IC=100A
60
V
BVCBO
IC=100A
60
V
VCE(SAT)
IC=100mA, IB=0.1mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
10,000
hFE
VCE=5.0V, IC=100mA
10,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
CMPTA27
NPN
SILICON DARLINGTON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 ( 07-December 2001)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA27 type
is a Silicon NPN Darlington Transistor manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for applications
requiring extremely high gain.
Marking Code is FG.
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPTA27
NPN
SILICON DARLINGTON TRANSISTOR
R4 ( 07-December 2001)
MARKING CODE: FG
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
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