Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
202
CMPTA29
HIGH VOLTAGE
NPN SILICON
DARLINGTON TRANSISTOR
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPTA29 is a Silicon NPN Darlington
Transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for applications requiring
extremely high voltage and high gain.
Marking Code is C29.
MAXIMUM RATINGS: (TA=25
o
C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCES
100
V
Emitter-Base Voltage
VEBO
12
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS: (TA=25
o
C)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICES
VCE=80V
500
nA
ICBO
VCB=80V
100
nA
IEBO
VBE=10V
100
nA
BVCES
IC=100
A
100
V
BVCBO
IC=100
A
100
V
BVEBO
IE=10
A
12
V
VCE(SAT)
IC=10mA, IB=10
A
1.2
V
VCE(SAT)
IC=100mA, IB=100mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
NEW
203
R2
All dimensions in inches (mm).
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE
VCE=5.0V, IC=10mA
10,000
hFE
VCE=5.0V, IC=100mA
10,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
R1
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