Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
206
CMPTA44
NPN SILICON EXTREMELY
HIGH VOLTAGE TRANSISTOR
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
450
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
300
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=400V
100
nA
ICES
VCE=400V
500
nA
IEBO
VBE=4.0V
100
nA
BVCBO
IC=100
A
450
V
BVCES
IC=100
A
450
V
BVCEO
IC=1.0mA
400
V
BVEBO
IE=10
A
6.0
V
VCE(SAT)
IC=1.0mA, IB=0.1mA
0.40
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.50
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.75
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.75
V
hFE
VCE=10V, IC=1.0mA
40
hFE
VCE=10V, IC=10mA
50
200
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA44
type is a surface mount epoxy molded silicon
planar epitaxial transistors designed for
extremely high voltage applications.
Marking Code is C3Z.
207
R2
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE
VCE=10V, IC=50mA
45
hFE
VCE=10V, IC=100mA
20
fT
VCE=10V, IC=10mA, f=10MHz
20
MHz
Cob
VCB=20V, IE=0, f=1.0MHz
7.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
130
pF
All dimensions in inches (mm).
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
PDF 
ZIP