MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
4.0
V
Collector Current
IC
500
mA
Base Current
IB
100
mA
Peak Base Current
IBM
200
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=80V
100
nA
ICBO
VCB=80V, TA=150C
20
A
ICEO
VCE=60V
100
nA
BVCEO
IC=1.0mA
80
V
BVEBO
IE=100A
4.0
V
VCE(SAT)
IC=100mA, IB=10mA
0.25
V
VBE(ON)
VCE=1.0V, IC=100mA
1.20
V
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
fT
VCE=2.0V, IC=10mA, f=100MHz (CMPTA06)
100
MHz
fT
VCE=1.0V, IC=100mA, f=100MHz(CMPTA56)
50
MHz
CMPTA06 NPN
CMPTA56 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-23 CASE
Central
Semiconductor Corp.
TM
R5 (13-November 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA06,
CMPTA56 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a surface mount
package, designed for small signal general
purpose and switching applications.
MARKING CODES: CMPTA06 : C1G
CMPTA56 : C2G
Central
Semiconductor Corp.
TM
SOT-23 CASE - MECHANICAL OUTLINE
CMPTA06 NPN
CMPTA56 PNP
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
R5 (13-November 2002)
MARKING CODE:
CMPTA06: C1G
CMPTA56: C2G
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
PDF 
ZIP