DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA77
type is a Silicon PNP Darlington Transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for applications requiring extremely
high gain.
MARKING CODE: C77
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Emitter Voltage
VCES
60
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICES
VCE=50V
500
nA
ICBO
VCB=50V
100
nA
IEBO
VEB=10V
100
nA
BVCES
IC=100A
60
V
BVCBO
IC=100A
60
V
VCE(SAT)
IC=100mA, IB=0.1mA
1.5
V
VBE(ON)
VCE=5.0V, IC=100mA
2.0
V
hFE
VCE=5.0V, IC=10mA
10,000
hFE
VCE=5.0V, IC=100mA
10,000
fT
VCE=5.0V, IC=10mA, f=100MHz
125
MHz
CMPTA77
SURFACE MOUNT
PNP SILICON
DARLINGTON TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (19-March 2003)
PDF 
ZIP