MAXIMUM RATINGS: (TA=25C)
SYMBOL
CMPTA42
CMPTA92
UNITS
Collector-Base Voltage
VCBO
300
300
V
Collector-Emitter Voltage
VCEO
300
300
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Continuous Collector Current
IC
500 mA
Power Dissipation
PD
350 mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
357
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
CMPTA42
CMPTA92
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICBO
VCB=200V
100
250
nA
IEBO
VBE=6.0V
100
-
nA
IEBO
VBE=3.0V
-
100
nA
BVCBO
IC=100A
300
300
V
BVCEO
IC=1.0mA
300
300
V
BVEBO
IE=100A
6.0
5.0
V
VCE(SAT)
IC=20mA, IB=2.0mA
0.5
0.5
V
VBE(SAT)
IC=20mA, IB=2.0mA
0.9
0.9
V
hFE
VCE=10V, IC=1.0mA
25
25
hFE
VCE=10V, IC=10mA
40
40
hFE
VCE=10V, IC=30mA
40
25
fT
VCE=20V, IC=10mA, f=100MHz
50
50
MHz
Cob
VCB=20V, IE=0, f=1.0MHz
3.0
6.0
pF
CMPTA42 NPN
CMPTA92 PNP
SILICON COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R4 (26-September 2002)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTA42,
CMPTA92 types are complementary surface
mount epoxy molded silicon planar epitaxial
transistors designed for high voltage applications.
MARKING CODE:
CMPTA42: C1D
CMPTA92: C2D
Central
Semiconductor Corp.
TM
CMPTA42 NPN
CMPTA92 PNP
SILICON COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
R4 (26-September 2002)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE:
CMPTA42: C1D
CMPTA92: C2D
SOT-23 CASE - MECHANICAL OUTLINE
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