Central
Central
Central
Central
Central
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.
TM
208
MAXIMUM RATINGS (TA=25oC)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
3.0
V
Power Dissipation
PD
350
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
o
C
Thermal Resistance
JA
357
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25
o
C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=25V
100
nA
IEBO
VEB=2.0V
100
nA
BVCBO
IC=100
A
30
V
BVCEO
IC=1.0mA
25
V
BVEBO
IE=10
A
3.0
V
VCE(SAT)
IC=4.0mA, IB=0.4mA
0.50
V
VBE(ON)
VCE=10V, IB=4.0mA
0.95
V
hFE
VCE=10V, IC=4.0mA
60
fT
VCE=10V, IC=4.0mA, f=100MHz
650
MHz
Ccb
VCB=10V, IE=0, f=1.0MHz
0.70
pF
Crb
VCB=10V, IE=0, f=1.0MHz
0.65
pF
rb'Cc
VCB=10V, IC=4.0mA, f=31.8MHz
9.0
ps
CMPTH10
NPN SILICON RF TRANSISTOR
SOT-23 CASE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMPTH10 type is an NPN silicon RF transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for low noise UHF/VHF amplifier and
high output oscillator applications.
Marking code is C3E.
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