MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
20
V
Collector-Emitter Voltage
VCEO
20
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current (Continuous)
IC
50
mA
Power Dissipation
PD*
225
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-55 to +150
C
Thermal Resistance
JA
556
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C UNLESS OTHERWISE NOTED)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=10V
100
nA
IEBO
VEB=2.0V
100
nA
BVCBO
IC=10
A
20
V
BVCEO
IC=1.0mA
20
V
BVEBO
IE=10
A
3.0
V
VCE(SAT)
IC=5.0mA, IB=500A
0.5
V
VBE(ON)
VCE=10V, IC=5.0mA
0.9
V
hFE
VCE=10V, IC=5.0mA
60
fT
VCE=10V, IC=5.0mA, f=100MHz
600
MHz
Ccb
VCB=10V, IE=0, f=1.0MHz
0.85
pF
Cce
VCB=10V, IB=0, f=1.0MHz
0.65
pF
* FR-4 Epoxy PCB Substrate 1.6" x 1.6" x 0.06"\
CMPTH81
SURFACE MOUNT
PNP SILICON RF TRANSISTOR
SOT-23 CASE
Central
Semiconductor Corp.
TM
R3 (20-February 2003)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPTH81
type is a PNP Silicon RF Transistor, epoxy
molded in a surface mount package, designed
for general RF amplifier applications.
MARKING CODE: C3D
Central
Semiconductor Corp.
TM
SOT-23 CASE- MECHANICAL OUTLINE
CMPTH81
SURFACE MOUNT
PNP SILICON RF TRANSISTOR
R3 (20-February 2003)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: C3D
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