CZT853
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
200
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
6.0
A
Power Dissipation
PD
3.0
W (Note 1)
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
41.7
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=150V
10
nA
ICER
VCE=150V, RBE 1k
10
nA
ICBO
VCB=150V, TA=100C
1.0
A
IEBO
VEB=6.0V
10
nA
BVCBO
IC=100A
200
220
V
BVCER
IC=10mA, RBE 1k
200
210
V
BVCEO
IC=10mA
100
110
V
BVEBO
IE=100A
6.0
8.0
V
VCE(SAT)
IC=100mA, IB=5mA
22
50
mV
VCE(SAT)
IC=2.0A, IB=100mA
135
170
mV
VCE(SAT)
IC=5.0A, IB=500mA
340
mV
VBE(SAT)
IC=5.0A, IB=500mA
1.25
V
SOT-223 CASE
Central
Semiconductor Corp.
TM
R1 (30-January 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT853 type
is a high current NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a surface mount package,
designed for high voltage and high current
amplifier applications.
MARKING CODE: FULL PART NUMBER
PNP complement: CZT953
Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum)
Central
Semiconductor Corp.
TM
SOT-223 CASE - MECHANICAL OUTLINE
CZT853
SURFACE MOUNT
HIGH CURRENT
SILICON NPN TRANSISTOR
R1 (30-January 2006)
LEAD CODE:
1) BASE
2) COLLECTOR
3) EMITTER
4) COLLECTOR
MARKING CODE:
FULL PART NUMBER
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
hFE
VCE=2.0V, IC=10mA
100
hFE
VCE=2.0V, IC=2.0A
100
200
300
hFE
VCE=2.0V, IC=4.0A
50
100
hFE
VCE=2.0V, IC=10A
20
30
fT
VCE=10V, IC=100mA, f=50MHz
190
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
38
pF
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