MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
40
V
Collector-Emitter Voltage
VCEO
25
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
1.0
A
Collector Current (Peak)
ICM
1.5
A
Power Dissipation
PD
275
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
455
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
CMST3410
CMST7410
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
UNITS
ICBO
VCB=40V
100
nA
IEBO
VEB=6.0V
100
nA
BVCBO
IC=100A
40
V
BVCEO
IC=10mA
25
V
BVEBO
IE=100A
6.0
V
VCE(SAT)
IC=50mA, IB=5.0mA
20
25
50
mV
VCE(SAT)
IC=100mA, IB=10mA
35
40
75
mV
VCE(SAT)
IC=200mA, IB=20mA
75
80
150
mV
VCE(SAT)
IC=500mA, IB=50mA
130
150
250
mV
VCE(SAT)
IC=800mA, IB=80mA
200
220
400
mV
VCE(SAT)
IC=1.0A, IB=100mA
250
275
450
mV
VBE(SAT)
IC=800mA, IB=80mA
1.1
V
VBE(ON)
VCE=1.0V, IC=10mA
0.9
V
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
MHz
Cob
VCB=10V, IE=0, f=1.0MHz (CMST3410)
10
pF
Cob
VCB=10V, IE=0, f=1.0MHz (CMST7410)
15
pF
CMST3410 NPN
CMST7410 PNP
SURFACE MOUNT
SUPERmini
TM
COMPLEMENTARY SILICON
LOW VCE(SAT) TRANSISTORS
SOT-323 CASE
Central
Semiconductor Corp.
TM
R0 (5-April 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST3410,
CMST7410 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in a SUPERmini
TM
surface
mount package, designed for battery driven,
handheld devices requiring high current and low
VCE(SAT) voltages.
MARKING CODES:
CMST3410:
C03
CMST7410:
C07
Central
Semiconductor Corp.
TM
CMST3410 NPN
CMST7410 PNP
SURFACE MOUNT
SUPERmini
TM
COMPLEMENTARY SILICON
LOW VCE(SAT) TRANSISTORS
R0 (5-April 2005)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODES:
CMST3410:
C03
CMST7410:
C07
SOT-323 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
CMST3410 NPN
CMST7410 PNP
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