MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Power Dissipation
PD
275
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
455
C/W
ELECTRICAL CHARACTERISTICS (TA=25C unless otherwise noted)
CMST5086
CMST5087
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN MAX
UNITS
ICBO
VCB=10V
10
10
nA
ICBO
VCB=35V
50
50
nA
BVCBO
IC=100A
50
50
V
BVCEO
IC=1.0mA
50
50
V
BVEBO
IE=100A
3.0
3.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.30
0.30
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.85
0.85
V
hFE
VCE=5.0V, IC=0.1mA
150
500
250
800
hFE
VCE=5.0V, IC=1.0mA
150
250
hFE
VCE=5.0V, IC=10mA
150
250
fT
VCE=5.0V, IC=500A, f=20MHz
40
40
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
4.0
pF
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
150
600
250
900
NF
VCE=5.0V, IC=20mA, RS=10k
f=10Hz to 15.7kHz
3.0
2.0
dB
NF
VCE=5.0V, IC=100A, RS=3.0k
f=1.0kHz 3.0
2.0
dB
CMST5086
CMST5087
SURFACE MOUNT
SUPERmini
TM
PNP SILICON TRANSISTORS
SOT-323 CASE
Central
Semiconductor Corp.
TM
R2 (4-January 2004)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST5086,
CMST5087 types are PNP silicon transistors
manufactured by the epitaxial planar process,
epoxy molded in a SUPERmini
TM
surface mount
package, designed for applications requiring
high gain and low noise.
MARKING CODES: CMST5086: 2PC
CMST5087: 2QC
Central
Semiconductor Corp.
TM
SOT-323 CASE - MECHANICAL OUTLINE
CMST5086
CMST5087
SURFACE MOUNT
SUPERmini
TM
PNP SILICON TRANSISTORS
R2 (4-January 2004)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE:
CMST5086 - 2PC
CMST5087 - 2QC
CMST5086
CMST5087
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