CMST6427E
E
EN
NH
HA
AN
NC
CE
ED
D S
SP
PE
EC
CIIF
FIIC
CA
AT
TIIO
ON
N
SURFACE MOUNT, SUPERmini
TM
SILICON NPN DARLINGTON
TRANSISTOR
SOT-323 CASE
Central
Semiconductor Corp.
TM
R0 (22-March 2006)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMST6427E is an
Enhanced Specification, SUPERmini
TM
, NPN Silicon
Darlington Transistor. High DC Current gains, coupled
with a Low Saturation Voltage, make this an excellent
choice for industrial/consumer applications where
operational efficiency and small size are top priority.
MARKING CODE : C46
FEATURES:
HIGH CURRENT (500mA MAX)
HIGH DC CURRENT GAIN (15K MIN)
LOW SATURATION VOLTAGE (VCE(SAT)= 0.8V MAX)
HIGH INPUT IMPEDANCE
SUPERminiTM SOT-323 SURFACE MOUNT PACKAGE
APPLICATIONS:
MOTOR DRIVERS
RELAY DRIVERS
PRE-AMPLIFIER INPUT APPLICATIONS
VOLTAGE REGULATOR CONTROLS
MAXIMUM RATINGS: (TA=25C unless otherwise noted)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCES
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
12
V
Continuous Collector Current
IC
500
mA
Power Dissipation
PD
275
mW
Operating and Storage Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
455
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
ICBO
VCB=30V
100
nA
ICEO
VCE=25V
100
nA
IEBO
VBE=10V
100
nA
BVCBO
IC=100A
60
V
BVCES
IC=100A
60
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10A
14
V
VCE(SAT)
IC=50mA, IB=0.5mA
0.80
V
VCE(SAT)
IC=100mA, IB=0.1mA
0.85
V
VCE(SAT)
IC=500mA, IB=0.5mA
1.0
V
Enhanced Specification
Central
Semiconductor Corp.
TM
SOT-323 CASE - MECHANICAL OUTLINE
CMST6427E
E
EN
NH
HA
AN
NC
CE
ED
D S
SP
PE
EC
CIIF
FIIC
CA
AT
TIIO
ON
N
SURFACE MOUNT, SUPERmini
TM
SILICON NPN DARLINGTON
TRANSISTOR
R0 (22-March 2006)
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
MARKING CODE: C46
ELECTRICAL CHARACTERISTICS (CONTINUED): (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
VBE(SAT)
IC=500mA, IB=0.5mA
2.00
V
VBE(ON)
VCE=5.0V, IC=50mA
1.75
V
hFE
VCE=5.0V, IC=10mA
15K
100K
hFE
VCE=5.0V, IC=100mA
25K
200K
hFE
VCE=5.0V, IC=500mA
15K
140K
fT
VCE=5.0V, IC=10mA, f=100MHz
200
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
7.0
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
15
pF
NF
VCE=5.0V, IC=1.0mA, RS=100k,
10
dB
f=1.0kHz TO 15.7kHz
Enhanced Specification
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