MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Peak Repetitive Reverse Voltage
VRRM
40
V
Continuous Forward Current
IF
200
mA
Peak Repetitive Forward Current
IFRM
300
mA
Forward Surge Current, tp=10ms
IFSM
600
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ, Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IR
VR=35V
170
500
nA
IR
VR=35V, TA=100C
25
100
A
BVR
IR=100A
40
55
V
VF
IF=100A
240
260
mV
VF
IF=500A
285
310
mV
VF
IF=1.0mA
305
330
mV
VF
IF=50mA
535
600
mV
VF
IF=100mA
670
750
mV
CT
VR=1.0V, f=1 MHz
10
pF
trr
IF=IR=10mA, Irr=1.0mA, RL=100
5.0
ns
CMUSH2-4
CMUSH2-4A
CMUSH2-4C
CMUSH2-4S
SURFACE MOUNT
ULTRAminiTM
SILICON SCHOTTKY DIODES
SOT-523 CASE
Central
Semiconductor Corp.
TM
R0 (31-January 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUSH2-4
Series types are Silicon Schottky Diodes, epoxy
molded in a ULTRAminiTM SOT-523 surface
mount package, designed for fast switching
applications requiring a low forward voltage drop.
CMUSH2-4:
SINGLE
MARKING CODE: C42
CMUSH2-4A:
DUAL, COMMON ANODE
MARKING CODE: C4A
CMUSH2-4C:
DUAL, COMMON CATHODE
MARKING CODE: C4C
CMUSH2-4S:
DUAL, IN SERIES
MARKING CODE: C4S
Central
Semiconductor Corp.
TM
CMUSH2-4
CMUSH2-4A
CMUSH2-4C
CMUSH2-4S
SURFACE MOUNT
ULTRAminiTM
SILICON SCHOTTKY DIODES
R0 (31-January 2005)
SOT-523 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
CMUSH2-4
1) Anode
2) No Connection
3) Cathode
MARKING CODE:
C42
CMUSH2-4A
1) Cathode D1
2) Cathode D2
3) Anode D1, D2
MARKING CODE:
C4A
CMUSH2-4C
1) Anode D1
2) Anode D2
3) Cathode D1, D2
MARKING CODE:
C4C
CMUSH2-4S
1) Anode D1
2) Cathode D2
3) Cathode D1, Anode D2
MARKING CODE:
C4S
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