DESCRIPTION:
The CENTRAL
SEMICONDUCTOR
CMUT2222A type is an NPN silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in an ULTRAminiTM surface
mount package, designed for small signal
general purpose and switching applications.
Marking Code is PC1.
CMUT2222A
ULTRAminiTM SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-523 CASE
Central
Semiconductor Corp.
TM
R1 ( 2 -October 2001)
MAXIMUM RATINGS: (TA=25C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
75
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
600
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
10
nA
ICBO
VCB=60V, TA=125C
10
A
IEBO
VEB=3.0V 10
nA
ICEV
VCE=60V, VEB=3.0V
10
nA
BVCBO
IC=10A
75
V
BVCEO
IC=10mA
40
V
BVEBO
IE=10A
6.0
V
VCE(SAT)
IC=150mA, IB=15mA
0.3
V
VCE(SAT)
IC=500mA, IB=50mA
1.0
V
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
V
VBE(SAT)
IC=500mA, IB=50mA
2.0
V
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=500mA
40
LEAD CODE:
1) Base
2) Emitter
3) Collector
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-523
CMUT2222A
ULTRAminiTM SURFACE MOUNT
NPN SILICON TRANSISTOR
BOTTOM VIEW
I
H
G
F
E
D
C
A
R1
1
2
3
B
R1 ( 2 -October 2001)
ELECTRICAL CHARACTERISTICS: Continued
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
fT
VCE=20V, IC=20mA, f=100MHz 300
MHz
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
pF
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
2.0
8.0
k
hie
VCE=10V, IC=10mA, f=1.0kHz 0.25
1.25
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
8.0
x10-4
hre
VCE=10V, IC=10mA, f=1.0kHz
4.0
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
300
hfe
VCE=10V, IC=10mA, f=1.0kHz
75
375
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
5.0
35
mhos
hoe
VCE=10V, IC=10mA, f=1.0kHz
25
200
mhos
rb'Cc
VCB=10V, IE=20mA, f=31.8MHz
150
ps
NF
VCE=10V, IC=100
A, RS=1.0k
, f=1.0kHz
4.0
dB
td
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
10 ns
tr
VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA
25
ns
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
225
ns
tf
VCC=30V, IC=150mA, IB1=IB2=15mA
60
ns
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