DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMUT3904,
CMUT3906 types are complementary silicon
transistors manufactured by the epitaxial planar
process, epoxy molded in an ULTRAminiTM
surface mount package, designed for small signal
general purpose amplifier and switching
applications.
Marking code for CMUT3904 is AC1.
Marking code for CMUT3906 is AC2.
CMUT3904 NPN
CMUT3906 PNP
ULTRAminiTMSURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
SOT-523 CASE
Central
Semiconductor Corp.
TM
R0 ( 30-May 2001)
MAXIMUM RATINGS: (TA=25C)
SYMBOL
CMUT3904
CMUT3906
UNITS
Collector-Base Voltage
VCBO
60
40
V
Collector-Emitter Voltage
VCEO
40
40
V
Emitter-Base Voltage
VEBO
6.0
5.0
V
Collector Current
IC
200
mA
Power Dissipation
PD
250
mW
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
C
Thermal Resistance
JA
500
C/W
ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted)
CMUT3904
CMUT3906
SYMBOL
TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
ICEV
VCE=30V, VEB=3.0V
50
50
nA
BVCBO
IC=10A
60
40
V
BVCEO
IC=1.0mA
40
40
V
BVEBO
IE=10A
6.0
5.0
V
VCE(SAT)
IC=10mA, IB=1.0mA
0.20
0.25
V
VCE(SAT)
IC=50mA, IB=5.0mA
0.30
0.40
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65 0.85 0.65
0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
0.95
0.95
V
hFE
VCE=1.0V, IC=0.1mA
40
60
hFE
VCE=1.0V, IC=1.0mA
70
80
hFE
VCE=1.0V, IC=10mA
100 300 100
300
hFE
VCE=1.0V, IC=50mA
60
60
hFE
VCE=1.0V, IC=100mA
30
30
Central
Semiconductor Corp.
TM
MECHANICAL OUTLINE - SOT-523
CMUT3904 NPN
CMUT3906 PNP
ULTRAminiTMSURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
BOTTOM VIEW
I
H
G
F
E
D
C
A
R1
1
2
3
B
R0 ( 30-May 2001)
ELECTRICAL CHARACTERISTICS: Continued
CMUT3904
CMUT3906
SYMBOL TEST CONDITIONS
MIN
MAX
MIN
MAX
UNITS
fT
VCE=20V, IC=10mA, f=100MHz
300
250
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
4.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
8.0
10
pF
hie
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
10
2.0
12
k
hre
VCE=10V, IC=1.0mA, f=1.0kHz
0.5
8.0
0.1
10
x10-4
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
100 400
100 400
hoe
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
40
3.0
60
mhos
NF
VCE=5.0V, IC=100A, RS=1.0k
f=10Hz to 15.7kHz
5.0
4.0
dB
td
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
35
ns
tr
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
35
35
ns
ts
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
200
225
ns
tf
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
50
75
ns
LEAD CODE:
1) Base
2) Emitter
3) Collector
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